BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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UNIT – – 1. Test circuit for VCEOsust.

Oscilloscope display for VCEOsust. August 2 Rev 1. Switching times waveforms with inductive load.

Isc Silicon NPN Power Transistor

Test circuit resistive load. Normalised power derating and second breakdown curves. Switching times waveforms with resistive load.

Reverse bias safe operating area. Test circuit inductive load. Typical DC current gain. Forward bias safe operating area. August 4 Ptot max and Ptot peak max lines. Region of permissible DC operation.


Extension for repetitive pulse operation. Typical base-emitter and collector-emitter saturation voltages. Typical base-emitter saturation voltage. SOT; The seating plane is electrically isolated from all terminals. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate oxide.

but11af datasheet & applicatoin notes – Datasheet Archive

Refer to mounting instructions for F-pack envelopes. August 7 Rev 1. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.


Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may datazheet changed without notice.

No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

August 8 Rev 1.